Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy

JIANG, W. / XU, H. / XU, B. et al. | British Library Online Contents | 1999

Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD

Heinrichsdorff, F. / Krost, A. / Bimberg, D. et al. | British Library Online Contents | 1998

TEM characterization of single and multiple InGaAs/GaAs quantum wires grown by metal-organic vapor phase epitaxy on V-grooved substrates

Taurino, A. / Catalano, M. / Vasanelli, L. et al. | British Library Online Contents | 1999

Near-Field Study of Carrier Dynamics in InAs/GaAs Quantum Dots Grown on InGaAs Layers

Tomanek, P. / Dobis, P. / Benesova, M. et al. | British Library Online Contents | 2005

Misfitstrain and growth characteristics of InAs/GaAs quantum dots Grown by molecular beam epitaxy

Hyubg Seok Kim, / Ju Hyung Suh, / Chan Gyung Park, et al. | IEEE | 2006