Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures
Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures
Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures
Hofer, C. (Autor:in) / Teichert, C. (Autor:in) / Oehme, M. (Autor:in) / Werner, J. (Autor:in) / Lyutovich, K. (Autor:in) / Kasper, E. (Autor:in)
APPLIED SURFACE SCIENCE ; 256 ; 267-273
01.01.2009
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures
British Library Online Contents | 2017
|p-channel SiGe heterostructures for field effect applications
British Library Online Contents | 1996
|Ge instabilities near interfaces in Si/SiGe/Si heterostructures
British Library Online Contents | 2003
|Structural characterization of highly boron doped SiGe/Si heterostructures
British Library Online Contents | 2002
|Misfit dislocation dipoles in Si/SiGe/Si heterostructures on SOI
British Library Online Contents | 2006
|