Impact of post-nitridation annealing on ultra-thin gate oxide performance

He, Y. / Zhang, G. | British Library Online Contents | 2009

Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm

Trentzsch, M. / Golz, C. / Wieczorek, K. et al. | British Library Online Contents | 2008

Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. et al. | British Library Online Contents | 2005

UV assisted low temperature nitridation and post deposition oxidation technique for hafnium oxide gate dielectric

Son, S. Y. / Jang, J. H. / Kumar, P. et al. | British Library Online Contents | 2008

First AlGaN/GaN MOSFET with photoanodic gate dielectric

Mistele, D. / Rotter, T. / Rover, K. S. et al. | British Library Online Contents | 2002