Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
Henry, A. (Autor:in) / Leone, S. (Autor:in) / Andersson, S. (Autor:in) / Kordina, O. (Autor:in) / Janzen, E. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Chloride-Based SiC Epitaxial Growth
British Library Online Contents | 2009
|Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process
British Library Online Contents | 2000
|Epitaxial Growth of III-V Compound Semiconductors by Metal Organic Chloride (MOC) Method
British Library Conference Proceedings | 1993
|Fast Brittle Fracture During Concentrated Chloride SCC of SUS304 Steel
British Library Online Contents | 1997
|Corrosion mechanisms of iron in concentrated acidic zinc chloride media
British Library Online Contents | 1993
|