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Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates
Aigo, T. (Autor:in) / Tsuge, H. (Autor:in) / Yashiro, H. (Autor:in) / Fujimoto, T. (Autor:in) / Katsuno, M. (Autor:in) / Nakabayashi, M. (Autor:in) / Hoshino, T. (Autor:in) / Ohashi, W. (Autor:in) / Bauer, A.J. / Friedrichs, P.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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