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    Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates

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    Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates

    New search for: Aigo, T.
    New search for: Tsuge, H.
    New search for: Yashiro, H.
    New search for: Fujimoto, T.
    New search for: Katsuno, M.
    New search for: Nakabayashi, M.
    New search for: Hoshino, T.
    New search for: Ohashi, W.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

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    Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates

    New search for: Aigo, T.
    New search for: Tsuge, H.
    New search for: Yashiro, H.
    New search for: Fujimoto, T.
    New search for: Katsuno, M.
    New search for: Nakabayashi, M.
    New search for: Hoshino, T.
    New search for: Ohashi, W.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

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    Document information
    Title:

    Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4^o Off-Axis Substrates

    Contributors:

    Aigo, T. (author) / Tsuge, H. (author) / Yashiro, H. (author) / Fujimoto, T. (author) / Katsuno, M. (author) / Nakabayashi, M. (author) / Hoshino, T. (author) / Ohashi, W. (author) / Bauer, A.J. / Friedrichs, P.

    Published in:

    Silicon Carbide and Related Materials 2009 ; 119-122

    MATERIALS SCIENCE FORUM ; 645/648

    Publication date:

    2010-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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