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Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates
APPLIED SURFACE SCIENCE ; 270 ; 301-306
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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