Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping: Fid-Bau Portal

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Sonde, S. / Giannazzo, F. / Huntzinger, J.R. / Tiberj, A. / Syvajarvi, M. / Yakimova, R. / Raineri, V. / Camassel, J.

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Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Sonde, S. / Giannazzo, F. / Huntzinger, J.R. / Tiberj, A. / Syvajarvi, M. / Yakimova, R. / Raineri, V. / Camassel, J.

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Sonde, S. / Giannazzo, F. / Huntzinger, J.R. / Tiberj, A. / Syvajarvi, M. / Yakimova, R. / Raineri, V. / Camassel, J.

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Titel:

Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping

Beteiligte:

Sonde, S. (Autor:in) / Giannazzo, F. (Autor:in) / Huntzinger, J.R. (Autor:in) / Tiberj, A. (Autor:in) / Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Raineri, V. (Autor:in) / Camassel, J. (Autor:in) / Bauer, A.J. / Friedrichs, P.

Erschienen in:

Silicon Carbide and Related Materials 2009 ; 607-610

MATERIALS SCIENCE FORUM ; 645/648

Erscheinungsdatum:

01.01.2010

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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