A platform for research: civil engineering, architecture and urbanism
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
Sonde, S. (author) / Giannazzo, F. (author) / Huntzinger, J.R. (author) / Tiberj, A. (author) / Syvajarvi, M. (author) / Yakimova, R. (author) / Raineri, V. (author) / Camassel, J. (author) / Bauer, A.J. / Friedrichs, P.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth Rate and Thickness Uniformity of Epitaxial Graphene
British Library Online Contents | 2010
|Comparison of Vertical-Axis and Horizontal-Axis Current Meters
British Library Conference Proceedings | 1994
|Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
British Library Online Contents | 2012
|Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
British Library Online Contents | 2013
|British Library Online Contents | 2013
|