Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Uniformity and Morphology of 10 x 100mm 4^o Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
Uniformity and Morphology of 10 x 100mm 4^o Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
Uniformity and Morphology of 10 x 100mm 4^o Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
Das, H. (Autor:in) / Sunkari, S. (Autor:in) / Oldham, T. (Autor:in) / Rodgers, J. (Autor:in) / Casady, J. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
01.01.2013
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2012
|Calculation of RQD using the >100mm vs. >2D Length Criterion
British Library Conference Proceedings | 2000
|High Quality 100mm 4H-SiC Substrates with Low Resistivity
British Library Online Contents | 2010
|Steel section having a thickness of at least 100mm and method of manufacturing the same
Europäisches Patentamt | 2020
|Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
British Library Online Contents | 2009
|