Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
Harada, S. (Autor:in) / Ito, S. (Autor:in) / Kato, M. (Autor:in) / Takatsuka, A. (Autor:in) / Kojima, K. (Autor:in) / Fukuda, K. (Autor:in) / Okumura, H. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M.
Silicon Carbide and Related Materials 2009 ; 999-1004
MATERIALS SCIENCE FORUM ; 645/648
01.01.2010
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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