Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle: Fid-Bau Portal

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

Harada, S. / Ito, S. / Kato, M. / Takatsuka, A. / Kojima, K. / Fukuda, K. / Okumura, H.

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Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

Harada, S. / Ito, S. / Kato, M. / Takatsuka, A. / Kojima, K. / Fukuda, K. / Okumura, H.

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

Harada, S. / Ito, S. / Kato, M. / Takatsuka, A. / Kojima, K. / Fukuda, K. / Okumura, H.

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Title:

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

Contributors:

Harada, S. (author) / Ito, S. (author) / Kato, M. (author) / Takatsuka, A. (author) / Kojima, K. (author) / Fukuda, K. (author) / Okumura, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

Published in:

Silicon Carbide and Related Materials 2009 ; 999-1004

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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