Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
Buono, B. (Autor:in) / Ghandi, R. (Autor:in) / Domeij, M. (Autor:in) / Malm, G. (Autor:in) / Zetterling, C.M. (Autor:in) / Ostling, M. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.
Silicon Carbide and Related Materials 2009 ; 1061-1064
MATERIALS SCIENCE FORUM ; 645/648
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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