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Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation
Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation
Memory characteristics of Al2O3/LaAlO3/SiO2 multilayer structures with tunnel oxide thickness variation
Cha, S. Y. (Autor:in) / Kim, H. J. (Autor:in) / Choi, D. J. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 45 ; 5223-5227
01.01.2010
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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