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Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses
Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses
Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses
Kim, H. J. (Autor:in) / Cha, S. Y. (Autor:in) / Choi, D. J. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 9-12
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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