Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 gas: Fid-Bau Portal

Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 gas

Tabata, A. / Hoshide, Y. / Kondo, A.

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Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 gas

Tabata, A. / Hoshide, Y. / Kondo, A.

Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 gas

Tabata, A. / Hoshide, Y. / Kondo, A.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Ähnliche Titel

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Dokumentinformationen

Titel:

Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 gas

Beteiligte:

Tabata, A. (Autor:in) / Hoshide, Y. (Autor:in) / Kondo, A. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 175 ; 201-206

Erscheinungsdatum:

01.01.2010

Format / Umfang:

6 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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