Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition: Fid-Bau Portal

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo, P. Q. / Zhou, Z. B. / Chan, K. Y. / Tang, D. Y. / Cui, R. Q. / Dou, X. M.

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Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo, P. Q. / Zhou, Z. B. / Chan, K. Y. / Tang, D. Y. / Cui, R. Q. / Dou, X. M.

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Luo, P. Q. / Zhou, Z. B. / Chan, K. Y. / Tang, D. Y. / Cui, R. Q. / Dou, X. M.

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Titel:

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Beteiligte:

Luo, P. Q. (Autor:in) / Zhou, Z. B. (Autor:in) / Chan, K. Y. (Autor:in) / Tang, D. Y. (Autor:in) / Cui, R. Q. (Autor:in) / Dou, X. M. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 255 ; 2910-2915

Erscheinungsdatum:

01.01.2008

Format / Umfang:

6 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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