Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field Effect Transistors
Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field Effect Transistors
Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field Effect Transistors
Mathijssen, S. G. (Autor:in) / Spijkman, M. J. (Autor:in) / Andringa, A. M. (Autor:in) / van Hal, P. A. (Autor:in) / McCulloch, I. (Autor:in) / Kemerink, M. (Autor:in) / Janssen, R. A. (Autor:in) / de Leeuw, D. M. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 5105-5109
01.01.2010
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors
British Library Online Contents | 2007
|The Concept of "Threshold Voltage" in Organic Field-Effect Transistors
British Library Online Contents | 1998
|Organic Field-Effect Transistors with a Low Pinch-Off Voltage and a Controllable Threshold Voltage
British Library Online Contents | 2008
|Analysis of Threshold Voltage Variations in Fin Field Effect Transistors
British Library Online Contents | 2011
|British Library Online Contents | 2015
|