Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Intrinsic Carrier Concentration in Strained Si~1~-~XGe~x/(101)Si
Intrinsic Carrier Concentration in Strained Si~1~-~XGe~x/(101)Si
Intrinsic Carrier Concentration in Strained Si~1~-~XGe~x/(101)Si
Song, J.J. (Autor:in) / Zhang, H.M. (Autor:in) / Hu, H.Y. (Autor:in) / Dai, X.Y. (Autor:in) / Xuan, R.X. (Autor:in) / Huang, Y.M.
01.01.2011
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Study of charge carrier quantization in strained Si-nMOSFETs
British Library Online Contents | 2005
|British Library Online Contents | 2006
|Origin of Carrier Types in Intrinsic Organic Semiconductors
British Library Online Contents | 2008
|British Library Online Contents | 2004
|