Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Investigation on Preferential Chemical Etching of Dislocations in Sapphire
Investigation on Preferential Chemical Etching of Dislocations in Sapphire
Investigation on Preferential Chemical Etching of Dislocations in Sapphire
Xie, X.J. (Autor:in) / Li, Y.Y. (Autor:in) / Wang, M. (Autor:in) / Liang, L.M. (Autor:in) / Hao, Q.Y. (Autor:in) / Liu, C.C. (Autor:in) / Huang, Y.M.
01.01.2011
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|Study of growth dislocations in L-arginine phosphate monohydrate single crystals by chemical etching
British Library Online Contents | 1996
|British Library Online Contents | 2009
|Sapphire chemical thinning liquid and sapphire thinning method
Europäisches Patentamt | 2024
|Growth defects in GaN films on sapphire: The probable origin of threading dislocations
British Library Online Contents | 1996
|