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Properties of a-Si:H films deposited by RF magnetron sputtering at 95^oC
Properties of a-Si:H films deposited by RF magnetron sputtering at 95^oC
Properties of a-Si:H films deposited by RF magnetron sputtering at 95^oC
Girginoudi, D. (Autor:in) / Tsiarapas, C. (Autor:in) / Georgoulas, N. (Autor:in)
APPLIED SURFACE SCIENCE ; 257 ; 3898-3903
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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