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Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
APPLIED SURFACE SCIENCE ; 257 ; 4468-4471
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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