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Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate
Wang, W. (Autor:in) / Li, L. (Autor:in) / Zhou, Q. (Autor:in) / Pan, J. (Autor:in) / Zhang, Z. (Autor:in) / Tok, E. S. (Autor:in) / Yeo, Y. C. (Autor:in)
APPLIED SURFACE SCIENCE ; 321 ; 240-244
01.01.2014
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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