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Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures
Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures
Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures
Kim, H. (Autor:in) / Lee, S.-N. (Autor:in) / Cho, J. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 13 ; 180-184
01.01.2010
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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