Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver
Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver
Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver
Lim, J.K. (Autor:in) / Tolstoy, G. (Autor:in) / Peftitsis, D. (Autor:in) / Rabkowski, J. (Autor:in) / Bakowski, M. (Autor:in) / Nee, H.P. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Comparison of SiC-JFET and Si-IGBT Inverter Losses
British Library Online Contents | 2009
|A 600V Deep-Implanted Gate Vertical JFET
British Library Online Contents | 2004
|Numerical simulation of implanted top-gate 6H-SiC JFET characteristics
British Library Online Contents | 1999
|Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
British Library Online Contents | 2013
|Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET
British Library Online Contents | 2006
|