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Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
Mizuno, T. (Autor:in) / Hasegawa, M. (Autor:in) / Sameshima, T. (Autor:in) / Miyazaki, S. / Tabata, H.
01.01.2011
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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