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    Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

    New search for: Mizuno, T.
    New search for: Hasegawa, M.
    New search for: Sameshima, T.
    New search for: Miyazaki, S.
    New search for: Tabata, H.

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    Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

    New search for: Mizuno, T.
    New search for: Hasegawa, M.
    New search for: Sameshima, T.
    New search for: Miyazaki, S.
    New search for: Tabata, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

    New search for: Mizuno, T.
    New search for: Hasegawa, M.
    New search for: Sameshima, T.
    New search for: Miyazaki, S.
    New search for: Tabata, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors

    Contributors:

    Mizuno, T. (author) / Hasegawa, M. (author) / Sameshima, T. (author) / Miyazaki, S. / Tabata, H.

    Published in:

    Technology Evolution for Silicon Nano-Electronics ; 72-78

    KEY ENGINEERING MATERIALS ; 470

    Publication date:

    2011-01-01

    Size:

    7 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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