Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Dopant Diffusion in Strained and Relaxed Si~1~-~xGe~x
Dopant Diffusion in Strained and Relaxed Si~1~-~xGe~x
Dopant Diffusion in Strained and Relaxed Si~1~-~xGe~x
Paine, A. D. N. (Autor:in) / Morooka, M. (Autor:in) / Willoughby, A. F. W. (Autor:in) / Bonar, J. M. (Autor:in) / Phillips, P. (Autor:in) / Dowsett, M. G. (Autor:in) / Cooke, G. (Autor:in)
MATERIALS SCIENCE FORUM ; 345-348
01.01.1995
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Boron diffusion in strained and strain-relaxed SiGe
British Library Online Contents | 2005
|Epitaxial ErSi2-x on strained and relaxed Si1-xGex
British Library Online Contents | 2002
|Compressively strained Ge channels on relaxed SiGe buffer layers
British Library Online Contents | 2003
|British Library Online Contents | 2005
|British Library Online Contents | 2011
|