Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy: Fid-Bau Portal

Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

Abid, M.A. / Hassan, H.A. / Hassan, Z. / Ng, S.S. / Bakhori, S.K.M. / Raof, N.H.A.

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Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

Abid, M.A. / Hassan, H.A. / Hassan, Z. / Ng, S.S. / Bakhori, S.K.M. / Raof, N.H.A.

Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

Abid, M.A. / Hassan, H.A. / Hassan, Z. / Ng, S.S. / Bakhori, S.K.M. / Raof, N.H.A.

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Title:

Characterization of AlxInyGal-x-yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

Contributors:

Abid, M.A. (author) / Hassan, H.A. (author) / Hassan, Z. (author) / Ng, S.S. (author) / Bakhori, S.K.M. (author) / Raof, N.H.A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 14 ; 164-169

Publication date:

2011-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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