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The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide
The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide
The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide
Qin, X.F. (Autor:in) / Li, S. (Autor:in) / Wang, F.X. (Autor:in) / Liang, Y. (Autor:in) / Zhu, G.
Advanced Materials and Computer Science ; 565-569
KEY ENGINEERING MATERIALS ; 474/476
01.01.2011
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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