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The mean projected range and range straggling of Xe ions implanted in Si and Si~1N~1~-~3~7~5H~0~.~6~0~3
The mean projected range and range straggling of Xe ions implanted in Si and Si~1N~1~-~3~7~5H~0~.~6~0~3
The mean projected range and range straggling of Xe ions implanted in Si and Si~1N~1~-~3~7~5H~0~.~6~0~3
Wang, K.-M. (Autor:in) / Shi, B.-R. (Autor:in) / Guo, H.-Y. (Autor:in) / Wei-Wang (Autor:in) / Ding, P.-J. (Autor:in) / Balkanski, M. / Kamimura, H. / Mahajan, S.
01.01.1996
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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