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Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
Song, X. (Autor:in) / Biscarrat, J. (Autor:in) / Bazin, A.E. (Autor:in) / Michaud, J.F. (Autor:in) / Cayrel, F. (Autor:in) / Zielinski, M. (Autor:in) / Chassagne, T. (Autor:in) / Portail, M. (Autor:in) / Collard, E. (Autor:in) / Alquier, D. (Autor:in)
01.01.2012
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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