Self-separation of two-inch-diameter freestanding GaN by hydride vapor phase epitaxy and heat treatment of sapphire

Li, X. / Wu, J. / Liu, N. et al. | British Library Online Contents | 2014

GaN Nanorods Doped by Hydride Vapor-Phase Epitaxy: Optical and Electrical Properties

Kim, H.-M. / Cho, Y.-H. / Kang, T. W. | British Library Online Contents | 2003

Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

Sohn, Y. / Kim, C. | British Library Online Contents | 2009

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

Wei, T. B. / Duan, R. F. / Wang, J. X. et al. | British Library Online Contents | 2007

High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study

Chaudhuri, J. / Ignatiev, C. / Stepanov, S. et al. | British Library Online Contents | 2000