Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study
High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study
High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study
Chaudhuri, J. (Autor:in) / Ignatiev, C. (Autor:in) / Stepanov, S. (Autor:in) / Tsvetkov, D. (Autor:in) / Cherenkov, A. (Autor:in) / Dmitriev, V. (Autor:in) / Rek, Z. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 78 ; 22 - 27
01.01.2000
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2000
|British Library Online Contents | 2012
|Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy
British Library Online Contents | 2009
|British Library Online Contents | 2003
|Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template
British Library Online Contents | 2009
|