Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
Inoue, K. (Autor:in) / Tokumoto, Y. (Autor:in) / Kutsukake, K. (Autor:in) / Ohno, Y. (Autor:in) / Yonenaga, I. (Autor:in)
KEY ENGINEERING MATERIALS ; 508 ; 220-223
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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