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Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
Growth of Heavily Indium Doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium
Inoue, K. (author) / Tokumoto, Y. (author) / Kutsukake, K. (author) / Ohno, Y. (author) / Yonenaga, I. (author)
KEY ENGINEERING MATERIALS ; 508 ; 220-223
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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