Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography

Tanuma, R. / Mori, D. / Kamata, I. et al. | British Library Online Contents | 2012

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2010

Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

Zhang, Z. H. / Shrivastava, A. / Sudarshan, T. S. | British Library Online Contents | 2006

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

Matsuhata, H. / Yamaguchi, H. / Nagai, I. et al. | British Library Online Contents | 2009

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2013