Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?
Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?
Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?
Zhang, Z. H. (Autor:in) / Shrivastava, A. (Autor:in) / Sudarshan, T. S. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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