Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2013

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. et al. | British Library Online Contents | 2009

Why are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations during SiC Epitaxy?

Zhang, Z. H. / Shrivastava, A. / Sudarshan, T. S. | British Library Online Contents | 2006

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC

Tanuma, R. / Mori, D. / Kamata, I. et al. | British Library Online Contents | 2012

Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates

Kang, J. / Ogawa, T. | British Library Online Contents | 2001