Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Okamoto, D. (Autor:in) / Yano, H. (Autor:in) / Hatayama, T. (Autor:in) / Fuyuki, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 733-738
01.01.2012
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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