A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide
Okamoto, D. (author) / Yano, H. (author) / Hatayama, T. (author) / Fuyuki, T. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 733-738
2012-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs
| British Library Online Contents | 2019
Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
| British Library Online Contents | 2014
Simulation of Segmented Double-Gate MOSFETs
| British Library Online Contents | 2012
| British Library Online Contents | 2000
Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
| British Library Online Contents | 2004