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Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process
Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process
Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process
Sullivan, W.W. (Autor:in) / Hettler, C. (Autor:in) / Dickens, J. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 813-816
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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