Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Li, X. / Tone, K. / Cao, L. H. et al. | British Library Online Contents | 2000

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Vassilevski, K. / Nikitina, I. / Horsfall, A. et al. | British Library Online Contents | 2007

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

Wang, S. R. / Raynaud, C. / Planson, D. et al. | British Library Online Contents | 2003

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

Hiyoshi, T. / Hori, T. / Suda, J. et al. | British Library Online Contents | 2009

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

Deng, X.C. / Rao, C.Y. / Wei, J. et al. | British Library Online Contents | 2014