Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Isoird, K. / Ottaviani, L. / Locatelli, M. L. et al. | British Library Online Contents | 2000

Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. et al. | British Library Online Contents | 2004

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K. / Lazar, M. / Locatelli, M.-L. et al. | British Library Online Contents | 2002

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Nguyen, D.M. / Raynaud, C. / Lazar, M. et al. | British Library Online Contents | 2012

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Vassilevski, K. / Nikitina, I. / Horsfall, A. et al. | British Library Online Contents | 2007