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Ultra High performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
Ultra High performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
Ultra High performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC
Menon, K.G. (Autor:in) / Ngwendson, L. (Autor:in) / Nakajima, A. (Autor:in) / Narayanan, E.M.S. (Autor:in) / Bruce, G.P. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 1139-1142
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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