Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
12 kV, 1 cm^2 SiC GTO Thyristors with Negative Bevel Termination
12 kV, 1 cm^2 SiC GTO Thyristors with Negative Bevel Termination
12 kV, 1 cm^2 SiC GTO Thyristors with Negative Bevel Termination
Zhang, Q. (Autor:in) / Agarwal, A.K. (Autor:in) / Capell, C. (Autor:in) / Cheng, L. (Autor:in) / O Loughlin, M.J. (Autor:in) / Burk, A.A. (Autor:in) / Palmour, J. (Autor:in) / Rumyantsev, S. (Autor:in) / Saxena, T. (Autor:in) / Levinshtein, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 1151-1154
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Graded Etched Junction Termination for SiC Thyristors
British Library Online Contents | 2011
|Springer Verlag | 2020
|Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
British Library Online Contents | 2009
|A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination
British Library Online Contents | 2002
|Bipolar Degradation in 4H-SiC Thyristors
British Library Online Contents | 2012
|