The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing: Fid-Bau Portal

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Lin, Y. C. / Hsu, C. Y. / Hung, S. K. / Chang, C. H. / Wen, D. C.

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The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Lin, Y. C. / Hsu, C. Y. / Hung, S. K. / Chang, C. H. / Wen, D. C.

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Lin, Y. C. / Hsu, C. Y. / Hung, S. K. / Chang, C. H. / Wen, D. C.

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Titel:

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Beteiligte:

Lin, Y. C. (Autor:in) / Hsu, C. Y. (Autor:in) / Hung, S. K. (Autor:in) / Chang, C. H. (Autor:in) / Wen, D. C. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 258 ; 9891-9895

Erscheinungsdatum:

01.01.2012

Format / Umfang:

5 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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