The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing: Fid-Bau Portal

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Lin, Y. C. / Hsu, C. Y. / Hung, S. K. / Chang, C. H. / Wen, D. C.

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The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Lin, Y. C. / Hsu, C. Y. / Hung, S. K. / Chang, C. H. / Wen, D. C.

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Lin, Y. C. / Hsu, C. Y. / Hung, S. K. / Chang, C. H. / Wen, D. C.

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Title:

The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

Contributors:

Lin, Y. C. (author) / Hsu, C. Y. (author) / Hung, S. K. (author) / Chang, C. H. (author) / Wen, D. C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 9891-9895

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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