Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

Khurelbaatar, Z. / Shim, K.-H. / Cho, J. et al. | British Library Online Contents | 2015

Influence of deep level impurities on the conductance technique for the determination of series resistance of a Schottky contact

Sanyal, S. / Chattopadhyay, P. | British Library Online Contents | 2001

The role of deep level traps in barrier height of 4H-SiC Schottky diode

Zaremba, G. / Adamus, Z. / Jung, W. et al. | British Library Online Contents | 2012

Reverse Characteristics of a 4H-SiC Schottky Barrier Diode

Hatakeyama, T. / Shinohe, T. | British Library Online Contents | 2002

Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)

Baira, M. / Ajjel, R. / Maaref, H. et al. | British Library Online Contents | 2006