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Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
Vallo, M. (Autor:in) / Lalinsky, T. (Autor:in) / Dobrocka, E. (Autor:in) / Vanko, G. (Autor:in) / Vincze, A. (Autor:in) / Ryger, I. (Autor:in)
APPLIED SURFACE SCIENCE ; 267 ; 159-163
01.01.2013
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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